Fully depleted 30-V-class thin-film SOI power MOSFET

A fully depleted 30-V-class thin-film SOI power MOSFET has been fabricated by the 1.0-/spl mu/m-rule CMOS/SOI process using a SIMOX substrate. Its electrical characteristics were successfully demonstrated and the impact of the buried oxide thickness on the various electrical characteristics were discussed based on experimental and numerical results. The minimum specific on-resistance of the fabricated device was 66 m/spl Omega//spl middot/mm/sup 2/ at a breakdown voltage of 32 V.