A novel implementation of noise analysis in general-purpose PDE-based semiconductor device simulators

The paper presents an efficient technique to evaluate the noise of bipolar or monopolar devices by means of the Impedance Field Method, implemented through a two-carrier drift-diffusion (DD) multidimensional numerical model. The approach, based on Branin's method for the noise analysis of networks, extends the adjoint approach already proposed for monopolar noise analysis. Preliminary results are presented on the analysis of pn junction diodes and FET's.