Measurement of mechanical properties of boron doped silicon microresonators using a resonant frequency technique

A technique for non-destructively measuring the Young's modulus and internal stress in a family of microengineered boron doped silicon resonators has been described and appropriate experiments undertaken. Results show that the value of Young's modulus for our boron doped silicon is within a few percent of that quoted in the literature for pure silicon. We have also confirmed that a large internal stress exists in the resonator due to the inclusion of the boron atoms in the silicon lattice.