Lateral insulated gate p-i-n transistor (LIGPT)-a new MOS gate lateral power device

A new insulated gate power device suitable for thin silicon-on-insulator (SOI) application is described and verified through two-dimensional numerical simulation. The lateral insulated gate p-i-n transistor (LIGPT) has a much superior current carrying capability than that of the lateral insulated gate bipolar transistor (LIGBT) because it conducts like a p-i-n diode. Because a new turn-off mechanism is employed, the LIGPT also demonstrates a very large gate turn-off capability. These two major advantages; coupled with other advantages such as latch-up free, make the LIGPT a very promising device for use in power integrated circuits on SOI.