A low insertion loss 60 GHz band pass filter using wafer transfer

In this paper, a low insertion loss band pass filter using WTT for 60 GHz band applications is presented. The filter geometry was pre-fabricated on a Si wafer with 3-um-thick Cu and 1KA SiN dielectric layer. Then this filter pattern was transferred onto the substrate Rogers RT/Duroid 5880. In this design, by replacing the silicon substrate with the Rogers RT/Duroid 5880 base, a low insertion loss 60 GHz band pass filter has been achieved. The measurement results show this filter has a 3dB band width of 7.5 GHz and insertion loss is 1.8 dB. Measured results are consistency with the HFSS simulation results.