A 40–80-GHz mHEMT single-pole-double-throw switch using traveling-wave concept

A 40–80-GHz SPDT switch has been designed, fabricated and measured. Using 0.15-µm mHEMT process, the SPDT switch achieves wideband characteristic due to its distributed nature. The insertion loss is less than 2.4 dB and isolation better than 23 dB. Compact layout of 1 × 1 mm² is achieved due to utilization of minimum number of via hole.