Raman and electrical characterization of n-InP implanted by 630-keV nitrogen

The goal of this work was to study the peculiarities of lattice disorder and conductivity compensation caused by N-implantation in liquid encapsulated Czochralski grown n-InP single crystals. The ion-induced damage of the lattice was probed by resonant Raman scattering (RS) measurements. Layers with resistivity as high as 10/sup 4/ /spl Omega/.cm were formed by implantation and subsequent annealing of the samples which allowed one to fabricate InP membranes for sensor applications by using selective electrochemical etching techniques.