Device quality InGaAs/InAlAs/InP heterostructures grown by gas source molecular beam epitaxy

In this paper, we report the growth of device quality InGaAs/InAlAs/InP materials by gas source molecular beam epitaxy (GSMBE) and their applications to HEMTs and MSM-PDs. Larger conduction band discontinuity and larger electron mobility which led to improved electrical performance of HEMT materials and devices can be obtained by adoption of dual strained InGaAs channel layer and InAlAs Schottky layer.