InGaAs/InGaAs tensile-strained-barrier MQW structures for optical amplifiers

The use of an InGaAs/InGaAs tensile-strained-barrier MQW active layer is an interesting approach to achieve polarization-insensitive semiconductor optical amplifiers (SOAs) at the 1.55 /spl mu/m wavelength. This work reports on the design and experimental results obtained on MQW structures grown by LP-MOCVD and characterized for their optical and structural quality. SOA devices made from these layers show a dichroism below 1 dB with signal fiber-to-fiber gains up to 20 dB, confirming the good optical and electrical quality of the structure.