Impact of strain on p-DGMOS performance using full-band Monte Carlo simulation

In this paper, the influence of mechanical stress on double-gate p-MOSFET performance has been investigated, by means of the full-band version of our Monte Carlo simulator (MONACO). Compressive and tensile stresses in the case of biaxially- and uniaxially-strained <100> and <110>-oriented channels have been studied. A tensile biaxial stress in plane (100) always decreases the gate delay and the lowest values are obtained for a <100>-oriented channel. A compressive uniaxial stress along <110> (or tensile uniaxial stress along <-110>) leads to an appreciable improvement of the gate delay in <110>-oriented channel devices. Resulting performance meets quite well the specifications of the updated 2008 ITRS defined for LOP45 and LSTP40.