CMOS optical receiver with integrated compound semiconductor thin-film inverted MSM detector operating at 155 Mbps

To utilize high efficiency, high speed compound CMOS semiconductor circuits with silicon circuitry, and to relax the circuit design constraints which are imposed by 50 W terminations, we report herein the integration of a double heterostructure GaAs-based high efficiency inverted (fingers on the bottom) metal-semiconductor-metal (I-MSM) thin film photodetector bonded directly onto the silicon receiver circuit.