Metal oxide semiconductor solar cells with silicon dioxide prepared by liquid-phase deposition method

In this study, a planar metal-oxide-semiconductor (MOS) solar cell with silicon dioxide prepared by liquid-phase deposition (LPD) method is proposed. The thickness of the insulating layer used is up to 220 /spl Aring/. Although the thickness of the insulating layer is thick enough to prevent tunneling, photovoltaic characteristics are found. For a cell with an active area of 0.118 cm/sup 2/ exposed under a 100 W bulb at 15 cm, short-circuit currents up to 0.164 mA are obtained. The fill factor is up to 71% and the open-circuit voltage is 0.35 V on average.