Subthreshold Characteristics of High-performance Inversion-type Enhancement-mode InGaAs NMOSFETs with ALD A12O3 as Gate Dielectric

In this paper, high-performance inversion-type E-mode In_0.53Ga_0.47As and In_0.65Ga_0.35As MOSFETs with ALD Al₂O₃ as gate dielectric is demonstrated and systematically studied their subthreshold or weak inversion characteristics. Much more works are needed to make this novel device structure a competitive technology for ultimate CMOS at 22 nm node or beyond. The work is supported by National Science Foundation and SRC FCRP MSD Center.