Structural Sensitivity of Interband Tunnel Diodes for SRAM

Here, we present a study to outline the design space and trade-offs for high PVCR, low-voltage, low-current tunnel diodes with best results for peak currents and voltages being 4.3 nA/mum², 50 mV with PVCR of 15, and demonstrate a fabrication process yielding submicron interband tunnel diodes for the first time. The PVCR of submicron diodes is observed to degrade for submicron device mesas indicating the need for passivation to maintain the PVCR.