Uniaxial strain effects on silicon nanowire pMOSFET and single-hole transistor at room temperature

In this paper, uniaxial stress effects on silicon nanowire pMOSFET (NW pFET) and single-hole transistor (SHT) are described. For the first time, it is found that stress technology is still effective as mobility booster even at extremely narrow NW pFET but the effects are gradually diminished as NW becomes narrower because effective mass modulation decreases. In case of SHT, oscillation current modulation, attributed to altered tunneling probability and energy level spacing by strain, is observed for the first time. In drift region of the SHT, strain effect of SHT approaches to the NW pFET case.