Effect of Threshold-Voltage Instability on SiC DMOSFET Reliability

The instability of the threshold voltage in SiC power DMOSFETs due to gate-bias stress and ON-state stress is a potential reliability issue, although the effects can be mitigated if the threshold voltage is set with enough positive margin so that no increase in OFF-state leakage occurs. In this case, the primary effect will be to increase the ON-state resistance by about five percent, which should be tolerable for power converter applications. Subthreshold-slope analysis of slower parameter-analyzer results reveal similar instabilities to those of fast I-V measurements.