15 GHz SPDT switch design using 0.15 µm GaAs technology for microwave applications

In this paper, very low loss and high isolation single pole double throw (SPDT) switch design for microwave applications using pseudomorphic high-electron mobility transistor (pHEMT) is presented. The MMIC switch design is developed using a commercially available 0.15 mum GaAs pHEMT technology. At the operating frequency of 15 GHz, the SPDT switch has 1.89 dB insertion loss and 26.66 dB of isolation. It also demonstrates 28.8 dBm of input P1dB gain compression point (P_1dB) and 25.9 dBm of output P1dB.