Simple Hybrid Electrothermal Simulation Procedure

Electrothermal models of power semiconductor components are often too complex and requiring a long simulation time. Besides, there can be a situation that electrical and thermal behaviour of the circuit are not analyzed within the same department of a company. This necessitates an appropriate procedure of electrothermal simulation, sufficiently quick, accurate and simple, allowing an efficient exchange of data of electrical and thermal parts of the system. Presented in this article is a simple calculation procedure for the time course of silicon equivalent temperature in power semiconductor components, based on the previously calculated current loading. This hybrid procedure allows the exchange and use of simulation results in case of separated procedures of current and thermal dimensioning of power semiconductor components.