A 15GHz Bandwidth High Efficiency Power Distributed Amplifier for Ultra-Wideband-Applications Using a Low-Cost SiGe BiCMOS Technology

In this paper the analysis, design and characterization of a 15 GHz power distributed amplifier for ultra-wideband radar and sensing applications are presented. The amplifier is fabricated in a low-cost 0.25 mum SiGe BiCMOS technology with a transit frequency f_t of 25 GHz. The circuit integrates four common-emitter gain cells, which are capacitively coupled to the base line for power optimization. Collector line tapering has been used for efficiency improvement. 13.5 dBm output power has been measured at the 1 dB compression point (P_1dB) in the desired frequency range with an associated gain of 9.5 dB and a gain flatness of plusmn0.5 dB with total power consumption of 140 mW. The peak power added efficiency (PAE) at P_1dB is 13.8%. The chip size of the compact amplifier is 1.45 mm². Good agreement between simulation and measurement was achieved.