A Comparison of Si CMOS and SiGe BiCMOS Technologies for Automotive Radars

This paper compares CMOS FET and SiGe HBT technologies for automotive applications and discusses limitations and opportunities for further development of both. SiGe circuits have demonstrated very promising performance, especially for the stringent reliability requirements and high temperature operating conditions set by the automotive industry. Their introduction to radar systems will occur in the near future. In the long run CMOS devices have the potential to become competitive in performance and offer opportunities for further reductions in manufacturing costs.