Exploring the effect on negative junction depth on electrical behaviour of sub-50nm GME-TRC MOSFET: A simulation study

In this paper, we propose a novel MOSFET design: Gate Material Engineered-Trapezoidal Recessed Channel (GME-TRC) MOSFET and investigate the effect of the negative junction depth (NJD) for different source drain(S/D) extension on the electrical behaviour of proposed structure. The results are compared with conventional Trapezoidal Recessed Channel (TRC) MOSFET using device simulators-DEVEDIT 3-D and ATLAS 3-D. Simulation results reveal that TRC MOSFET with GME architecture enhances device reliability and performance in terms of reduced electric field near the drain end, threshold voltage roll-off, improved gate control and driving current capabilities.