On the effect of scattering in Schottky Barrier MOSFETs

In this paper, we performed a simulation on a 45-nm UTB SOI Schottky Barrier MOSFETs using our two dimensional Ensemble full band Monte Carlo simulator to evaluate the effect of scattering in Schottky Barrier MOSFETs (SB FETs). The carrier transport details for both ballistic case and scattering case are simulated and analyzed. The scattering plays a less important role on the performance in SB FETs than in conventional highly doped S/D MOSFETs. Based on our analysis, the inappropriate of Natori’s ballistic transport model applied to SB FETs is revealed and the reason is due to the existence of non-local tunneling. Further development of the quasi ballistic model is necessary to include this non-local effect.