A novel avalanche photodiode array

A novel APD array is proposed. In this array, the p-type pixels are isolated from each other by an n-type implantation. With this method for pixel isolation, problems that exist in other APD arrays, namely a large dead zone between the pixels or a large dark current, are avoided. The gain at the pixel edges is influenced by the voltage on the n-type isolation implantation. By proper adjustment of this voltage, the gain at the edges can be made equal to the gain at the center. The region between the pixels, the pixel isolation region, can be very small and it is not insensitive for optical excitation, although its sensitivity is not as good as that of the pixels.<>