Enhanced wire bond transition from die to chip carrier for 3.1-10.6 GHz UWB applications

We present in this paper a way to optimize the bandwidth of standard wire bond (WB) transition from die to chip carrier. This optimization is based on a simple lumped model of the WB transition taking into account the common ground impedance between the die and the chip carrier levels. The model also includes the magnetic coupling between the signal WB and the grounds WB. This model is validated by full wave electromagnetic simulations. On the basis of this lumped model simple guiding rules to increase the transition bandwidth are given. The signal integrity of the WB transition is enhanced and a return loss greater than 15 dB is obtained in the 3.1-10.6 GHz frequency band with standard WB lengths.