A simple procedure to determine source/drain series resistance and effective channel length for advanced MOSFETs

A simple procedure to determine source/drain series resistance and effective channel length has been developed for advanced MOSFETs operated in linear region. The gate-bias dependence of source/drain resistance is considered. This new-developed procedure has been applied to devices with mask channel lengths of 0.23, 0.2, and 0.185 μm. The parameters extracted with this procedure have been validated by comparing calculated and measured I–V characteristics.