A comparative analysis between nitride films on GaAs and epitaxial films of GaN by MOCVD system

In this paper we report the conclusions about the analysis between the characteristics of nitrided thin gallium nitride (GaN) films on GaAs and epitaxial GaN films on buffer nitrided films. We use the metal-organic chemical vapour deposition technique for synthesize these films. Also ones films were characterized using X-ray diffraction (XRD), photoluminescence (PL) and atomic force microscopy (AFM).