1.52 μm photoluminescence from InAs quantum dots grown on patterned GaAs buffer

InAs patterned QDs (PQDs) preferentially nucleate on faceted GaAs pyramidal buffers using selective area epitaxy by metalorganic chemical vapor deposition. The photoluminescence (PL) wavelength is shown to be controlled by a single growth parameter, the growth time, without affecting the density of PQDs. Strong room temperature PL emissions over 1.5 mum from PQDs are demonstrated. The long wavelength emission is attributed to the large QD size and the partial strain energy relaxation of PQDs.