The dependence of optical and electrical properties of GaN nanowires on the growth temperature Paper #NA003

The optical and electrical transport of GaN nanowires grown by metal catalyzed metal organic chemical vapor deposition was investigated as a function of substrate temperature during growth. As the growth temperature increased from 800°C to 900°C the electrical conduction mechanism changed from space charge limited to ohmic transport , the nanowire resistivity dropped from ~10⁷ ohm-cm to ~10^-3 ohm-cm, and the band edge luminescence increased by more than two orders of magnitude. A strong correlation between the resistivity and the fraction of band edge luminescence for individual nanowires was observed.