Hard-soldered InGaAsP single-emitter diode lasers on CTE-matched heatsinks deliver record power

Applications such as direct pumping of rare-earth doped solid state and fiber lasers are driving development of higher power commercial diode lasers operating in the 1400 -nm to 2000 -nm band. In this work, we report on recent progress in high-power hard-soldered InGaAsP-based single emitter diode lasers. Peak continuous wave (CW) powers of 4 W, 2.3 W, and 1.4 W are measured at 25 degC for lasers operating at 1470 nm, 1700 nm, and 1940 nm, respectively. Quasi-continuous wave (QCW) power at 1700 -nm in excess of >10 W (peak) is reported from a single 150 -mum stripe emitter and >150W (peak) in a 16 emitter array configuration.