The selective growth of a single phase calcium silicide film in the Ca—Si system by R.F. magnetron sputtering

Ca films were deposited directly on Si(100) substrates using Radio Frequency (R.F.) magnetron sputtering system (MS), then subsequent were annealed at 800degC for 45 min, 60 min and 90 min in the vacuum furnace, respectively. Experimental results indicated that the selective grown of a single phase calcium silicide of multiple silicide phases in Ca-Si system is grown to form by sputtering conditions, annealing temperature and the different annealing time. Sputtering condition is the principal factor of the deposited film for the selective grown because it is close contacted with the morphological character, the bombardment defect and the nucleation density of one calcium silicide in one calcium silicides system and so on. 800degC is the most adaptive annealing temperature for a single calcium silicide film growth. The cubic phase Ca₂Si film and the tetragonal phase Ca₅Si₃ film are grown directly and individually on the different Si(100) substrates for the first time, respectively.