A New Two-Stage Ultra-Wide-Band 1-10-GHz Low Noise Amplifier

A new lower complexity ultra-wide-band 1-10-GHz low-noise amplifier is presented in this paper. This LNA only consists of two simple amplifiers with an inter-stage inductor connected. The first stage is a common-gate amplifier that is used to attain the wideband input matching and low noise. A common-source amplifier with shunt-peaked load as the second stage achieves high gain and wideband output matching simultaneously that does not need the source follower. Designed in the TSMC 0.18 mum RFCMOS technology, this proposed UWB LNA achieves the maximum power gain (S21) of 12.1 dB with the 3-dB band from 1 to 10 GHz and input/output reflection coefficient (S11 ,S22) of less than -10 dB from 1 to 10 GHz.The minimum noise figure is 3.8 dB.An IIP3 is -4.1 dBm at 5 GHz.The power dissipation is 12.6 mW from a 1.5-V supply voltage.