Design considerations for an ultra-low voltage amplifier with high EMI immunity

In this paper a class AB CMOS operational amplifier is devised. It is based on a two stages strongly symmetrical topology, very attractive in order to minimize the effects of disturbances arising from a wide class of sources. The amplifier can be fabricated in standard CMOS technology and is suitable for the low voltage supply of current integrated circuits. Simulation results, in terms of EMI immunity, are presented and compared with classical architectures.