Successful application of the 8-band k·p framework to optical properties of highly strained In(Ga)As/InGaAs quantum wells with strong conduction-valence band coupling

Band-edge optical properties of highly strained In(Ga)As/InGaAs quantum wells are analyzed by using 6- and 8-band kmiddotp theory. It is shown that the 8-band model is necessary for the analysis of In(Ga)As/InGaAs quantum wells having strain larger than 2%. The photoluminescence peak wavelength and absorption spectra of InAs/InGaAs quantum wells with the strain of 3.2 % calculated by 8-band model are in very good agreement with those obtained by experiment, showing the validity of the results presented here.