Investigation of channel backscattering characteristics for nanoscale SOI MOSFETs using a new temperature-dependent method

We have investigated the channel backscattering characteristics for SOI MOSFETs using a new temperature-dependent method considering self-heating effects. The temperature sensitivity of mobility (β) can be self-consistently determined to account for various degree of phonon scattering in nanoscale SOI devices. Our results indicate that both self-heating and floating-body effects are important in the determination of backscattering coefficients.