A revisited pseudo-MOSFET model for ultrathin SOI films

The pseudo-MOS transistor (Psi-MOSFET) is a quick technique for monitoring SOI wafers. Based on Poisson numerical simulations, we derive updated models for the characterization of ultrathin films, accounting for the density of traps of passivated and nonpassivated surfaces. These analytical models match the experimental results and are useful for accurate parameter extraction.