Atomistic approach for Boron Transient Enhanced Diffusion and clustering

A kinetic Monte Carlo (KMC) approach has been applied to study the thermal evolution of Boron implant damage and diffusion in bulk silicon in a wide range of temperatures between 700degC and 1100degC , considering furnace, rapid thermal and spike annealing. Boron transient enhanced diffusion (TED) and boron interstitial clustering (up to B₃I₃) have been considered with a consistent set of parameters for all the standard anneal cases, achieving a satisfactory agreement with experimental profiles and providing a good understanding of the main underlying microscopic mechanisms.