Characterization of a Novel 100-Channel Silicon Photomultiplier—Part II: Charge and Time

In this paper, we present the results of the charge and time characterization performed on our novel 100-channel silicon photomultiplier. We have improved our previous single-photon-avalanche-diode technology in order to set up a working device with outstanding features in terms of single-photon resolving power up to
R
= 45, a timing resolution down to 100 ps, and photon-detection efficiency of 14% at 420 nm. Tests were performed, and features were measured as a function of the bias voltage and of the incident photon flux. A dedicated data analysis procedure was developed that allows to extract at once the relevant parameters from the amplitude spectra and to determine the timing features.