AlGaN Schottky diodes for detector applications in the UV wavelength range

We report on the use of TCAD simulations to optimize AlGaN UV-detectors for space applications and advanced EUV lithography tools. (i) High dark current in present AlGaN Schottky diodes is explained by means of the Thin Surface Barrier model. (ii) This model and AlGaN material properties were implemented in TCAD software and verified with experimental results, facilitating future technology development. (iii) Key issues in technology development were identified and experimentally verified: reducing surface defects is shown to result in order-of-magnitude dark current reduction. (iv) A full semi-transparent Schottky contact is shown to provide a good compromise between low leakage and sufficient photocurrent.