Self protected low-drop voltage tracker based on a full MOS approach

Two new different approaches aimed to realize a self protected low-dropout voltage tracker regulator are presented. Both the circuits are based on a full MOS approach using a BCD-like technology. The schemes propose: (a) the generation of an accurate output voltage with current capability up to 50 mA, (b) output undervoltage protection (c) compliance to reverse voltage between output and input, for a maximum of 45 V, (d) output current limitation. The use of MOS components allows a more reliable design and higher voltage capability compared to a bipolar design. It has been proven that these schemes realize a self-protected voltage tracker regulator with a limited silicon area circuit. Test results from a prototype fabricated in a BCD-like 0.6-mum technology make evidence of the most important parameters of the regulators.