An analytic potential-based model for undoped nanoscale surrounding-gate MOSFETs

An analytic potential-based model for the mndoped surrounding-gate MOSFETs is derived in the paper. The model is obtained from solving Poisson equation rigorously together with the drain current formulation equivalent to Pao-Sah’s double integral previously proposed for long-charnel bulk MOSFETs. The model gives a fully self-consistent physical description for the channel potential, charge and current that is valid for the sub threshold, linear and saturation regions. The validity of the proposed model has been verified by extensive comparison with the exact numerical integrations and 3-D numerical simulation , demonstrating the model’s accuracy and prediction capability.