Efficient Calculation Algorithm for One-Dimensional Ion Implantation Profiles With High Tilt Angles

The concentration at a certain depth with high-tilt-angle implantation is calculated by integrating the lateral contribution of all beams in general, and so, it takes a long time to obtain depth profiles. We propose a new mesh configuration for numerical calculation of high-tilt-angle ion implantation profiles. With our mesh, the integration is identical to the summation of the concentration at the same depth of one beam's 2-D distribution. We show that our new algorithm gives the same result as the former integration method and, so, is useful for rapidly evaluating the profiles.