Efficient three-state WCDMA PA integrated with high-performance BiHEMT HBT / E-D pHEMT process

Power amplifiers for WCDMA applications must provide competitive power efficiency at low power levels as well as at full power. This paper presents a novel approach to obtain high PAE performance over a wide power band from three power states. It uses a novel BiHEMT process to co-integrate InGaP/GaAs HBT technology with InGaAs/AlGaAs E/D-Mode pHEMT into a single process. No bias reference voltage is required. Typical ultra-low power mode quiescent current is 5 mA.