Internal structure optimization of a DAR IMPATT diode for high frequency band

The analysis and optimization of the n "pvnp" avalanche diode have been realized on basis of the nonlinear model and special optimization procedure. This type of the diode that was named as double avalanche region (DAR) IMPATT diode includes two avalanche regions inside the diode. The phase delay, which was produced by means of the two avalanche regions and the drift region v, is sufficient to obtain the negative resistance for the wide frequency band. The admittance and energy characteristics of the DAR diode were analyzed in very wide frequency band from 30 up to 360 GHz. Output power level was optimized for the second frequency band near the 220 GHz.