A Novel Method for HBT Intrinsic Collector Resistance Extraction from S-Parameters

In this paper the extraction of series resistances for high-speed InP DHBT devices is investigated. Known extraction methods based on measured S-parameters are reviewed and error terms are identified. A novel method for intrinsic collector resistance extraction is proposed. The method is based on S- parameters measured in saturation and forward active regions. The results are applied to the large-signal modeling of InP DHBT devices using the UCSD HBT model and very accurate model response is obtained.