Photoinduced Effect on Surface Modes in H2+-Implanted YIG Thin Films

A previous report described the decrease of the surface spin wave resonance field, ΔH_p, with light irradiation of ion-implanted YIG at 77 K. Here the authors describe ΔH_p relaxation as the irradiation is turned on and off, as well as the effect of annealing on ΔH_p for films covered with a sputtered SiO₂ layer. The time to saturation of ΔH_p with light stimulation was much longer for annealed samples. Changes in ΔH_p normally accompanying annealing (250°C) were found to be almost absent in films covered with an SiO₂ layer.