Effects of gate current stress on electrical characteristics of Ge channel pMOSFETs with Si passivation

The electrical properties before and after gate current injection stress are studied for Ge pMOSFETs with Si passivation in order to study the interface robustness against carrier injection stress and the effects of interface charges on the channel mobility. It is found that MOSFETs with thicker Si passivation provide smaller amount of interface charge generation and lower mobility reduction after gate current injection stress.