Wide Band Gap Semiconductor SAW Type Devices for GHz Applications, Manufactured using Nano-Lithographic Techniques

This paper presents experiments to develop SAW structures with operating frequencies in the GHz range. The experiments were developed on AIN and GaN thin films with nano-metric lines for the IDT. The nanolithography was performed at IMT with the new purchased VEGA 5136 LM SEM from TESCAN and ELPHY Plus EBL from Raith GmbH. There were obtained some very good quality inerdigitated Ti/Au structures (with 30 digits and 29 interdigits 300 nm wide, 220 nm high and and 200 μm long). Lift-off techniques to remove the undesired metal were used. On wafer microwave measurements of the SAW structure (performed at IMT on the new purchased Anritsu vector analyzer equipped with Suss Microtec probes), have demonstrated its functionality. It was evidenced a pronounced resonance at about 2.8 GHz.