30GHz Amplifiers with 0.25μm SiGe BiCMOS

In this paper the possibility of using a low cost SiGe:C BiCMOS technology dedicated to few GHz applications up to 30 GHz is discussed. Spiral inductors with SRF higher than 30 GHz, are not available at the foundry library. Accordingly, inductors with a SRF higher than 45 GHz were obtained, however their Q is only 5 at 30 GHz. The test and modeling technique is presented. The design, implementation and test of a two stages common emitter amplifier without inductors are also presented. It has a 8 dB gain at 28 GHz and 1 dB bandwidth from 5 to 10 GHz with a maximum gain of 23 dB (best frequency range for this technology). The return losses are better then 10 dB from 10 to 35 GHz.