Design rule optimization of regular layout for leakage reduction in nanoscale design

The effect of non-rectilinear gate (NRG) due to sub-wavelength lithograph dramatically increases the leakage current by more than 15X. To mitigate this penalty, we have developed a systematic procedure to optimize key layout parameters in regular layout with minimum area and speed overhead. As demonstrated in 65nm technology, the optimization of regular layout achieves more than 70% reduction in leakage under NRG, with area penalty of ∼10% and marginal impact on circuit speed and active power.