A Gate Dielectric Last Approach to Integrate Organic Based Devices on Plastic Substrates

In this work we demonstrate a photo-lithographic based process to integrate organic-based devices including rectifiers, ring oscillators, current mirrors, inverters, diodes and capacitors on flexible substrates for RFID and flexible display applications. Our integration method includes a seven mask photolithography process that incorporates several discrete devices built with pentacene as the semiconductor and parylene as the gate dielectric and inter-level dielectric (ILD). The maximum temperature for all processes is 120degC.